HYBRID QUANTUM-MECHANICAL AND MOLECULAR MECHANICS STUDY OF CU ATOMS DEPOSITION ON SIO2 SURFACE-DEFECTS

Citation
N. Lopez et al., HYBRID QUANTUM-MECHANICAL AND MOLECULAR MECHANICS STUDY OF CU ATOMS DEPOSITION ON SIO2 SURFACE-DEFECTS, Chemical physics letters, 294(6), 1998, pp. 611-618
Citations number
39
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
ISSN journal
00092614
Volume
294
Issue
6
Year of publication
1998
Pages
611 - 618
Database
ISI
SICI code
0009-2614(1998)294:6<611:HQAMMS>2.0.ZU;2-M
Abstract
We have studied by means of ab initio Hartree-Fock and density functio nal theory the interaction of Cu atoms with two prominent point defect s at the SiO2 surface, the E' center, consisting of a Si singly occupi ed dangling bond, =Si-., and a non-bridging oxygen NBO, =Si-O-.. These surface defects have been represented by cluster models. Two approach es have been used for the determination of the adsorption properties: a full quantum-mechanical treatment, QM, and a hybrid quantum-mechanic al and molecular mechanics approach, QM/MM. The hybrid QM/MM? approach provides a sufficiently accurate description provided that the QM par t of the model is sufficiently large to include all surface interactio ns. (C) 1998 Elsevier Science B.V. All rights reserved.