HYBRID QUANTUM-MECHANICAL AND MOLECULAR MECHANICS STUDY OF CU ATOMS DEPOSITION ON SIO2 SURFACE-DEFECTS
Citation
N. Lopez et al., HYBRID QUANTUM-MECHANICAL AND MOLECULAR MECHANICS STUDY OF CU ATOMS DEPOSITION ON SIO2 SURFACE-DEFECTS, Chemical physics letters, 294(6), 1998, pp. 611-618
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
SICI code
0009-2614(1998)294:6<611:HQAMMS>2.0.ZU;2-M
Abstract
We have studied by means of ab initio Hartree-Fock and density functio
nal theory the interaction of Cu atoms with two prominent point defect
s at the SiO2 surface, the E' center, consisting of a Si singly occupi
ed dangling bond, =Si-., and a non-bridging oxygen NBO, =Si-O-.. These
surface defects have been represented by cluster models. Two approach
es have been used for the determination of the adsorption properties:
a full quantum-mechanical treatment, QM, and a hybrid quantum-mechanic
al and molecular mechanics approach, QM/MM. The hybrid QM/MM? approach
provides a sufficiently accurate description provided that the QM par
t of the model is sufficiently large to include all surface interactio
ns. (C) 1998 Elsevier Science B.V. All rights reserved.