THE EFFECT OF ANTISITE DEFECTS ON THE BAND-STRUCTURE AND DIELECTRIC FUNCTION OF IN1-XGAXSB SOLID-SOLUTIONS

Authors
DEIBUK VG STUDENETS VI
Citation
Vg. Deibuk et Vi. Studenets, THE EFFECT OF ANTISITE DEFECTS ON THE BAND-STRUCTURE AND DIELECTRIC FUNCTION OF IN1-XGAXSB SOLID-SOLUTIONS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 944-946
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
9
Year of publication
1998
Pages
944 - 946
Database
ISI
SICI code
1063-7826(1998)32:9<944:TEOADO>2.0.ZU;2-P
Abstract
A nonlocal empirical pseudopotential scheme that includes the spin-orb it interaction is used to calculate the electronic structure of In1-xG axSb solid solutions. A modified virtual-crystal approximation is used to explain the nonlinear experimental dependence of the width of the band gap on composition. The computed band structure is then used to c alculate the dispersion of the dielectric constant and compare it with experimental results. (C) 1998 American Institute of Physics. [1063-7 826(98)00709-1].