DETERMINING SURFACE RECOMBINATION RATES IN EPITAXIAL LAYERS OF N-CDXHG1-XTE FROM MEASUREMENTS OF THE PLANAR MAGNETORESISTANCE AND RELAXATION-TIMES FOR NONEQUILIBRIUM CHARGE-CARRIERS

Authors
BORODOVSKII PA BULDYGIN AF VARAVIN VS
Citation
Pa. Borodovskii et al., DETERMINING SURFACE RECOMBINATION RATES IN EPITAXIAL LAYERS OF N-CDXHG1-XTE FROM MEASUREMENTS OF THE PLANAR MAGNETORESISTANCE AND RELAXATION-TIMES FOR NONEQUILIBRIUM CHARGE-CARRIERS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 963-965
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
9
Year of publication
1998
Pages
963 - 965
Database
ISI
SICI code
1063-7826(1998)32:9<963:DSRRIE>2.0.ZU;2-2
Abstract
The dependence of the planar magnetoresistance on magnetic field has b een measured for epitaxial layers of n-CdxHg1-x (x = 0.211, 0.22) at 3 00 and 77 K. The 77 K measurements were made in electric fields below and above the threshold field for avalanche impact ionization. The mea surement results for the planar magnetoresistance and relaxation time of nonequilibrium charge carriers are used to determine surface recomb ination rates. (C) 1998 American Institute of Physics. [S1063-7826(98) 01309-X].