PHYSICAL MODEL AND RESULTS OF NUMERICAL-SIMULATION OF THE DEGRADATIONOF A SI SIO2 STRUCTURE AS A RESULT OF ANNEALING IN VACUUM/

A theoretical model is developed for the evolution of P-b-centers at a Si/SiO2 boundary during annealing in vacuum. The model takes into acc ount diffusion of atomic and molecular hydrogen and the reactions betw een the hydrogen and these centers at the boundary. The reaction const ants are calculated in the diffusion approximation. The results of the se calculations are found to agree with experiment in the temperature range 480 degrees-800 degrees C and oxide thickness range 200-1024 Ang strom for the (111) and (100) facets of silicon. (C) 1998 American Ins titute of Physics. [S1063-7826(98)01409-4].