PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/

Authors
GREKHOV IV VEKSLER MI IVANOV PA SAMSONOVA TP SHULEKIN AF
Citation
Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
9
Year of publication
1998
Pages
1024 - 1026
Database
ISI
SICI code
1063-7826(1998)32:9<1024:PAIASM>2.0.ZU;2-S
Abstract
The first observation of amplification of the photogeneration current in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reporte d. This effect can be used to increase the efficiency of existing UV-r ange 6H-SiC-based photodiodes. It also shows that bipolar SiC transist ors with a MOS tunnel emitter can be produced. (C) 1998 American Insti tute of Physics. [S1063-7826(98)02609-X].