Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
The first observation of amplification of the photogeneration current
in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reporte
d. This effect can be used to increase the efficiency of existing UV-r
ange 6H-SiC-based photodiodes. It also shows that bipolar SiC transist
ors with a MOS tunnel emitter can be produced. (C) 1998 American Insti
tute of Physics. [S1063-7826(98)02609-X].