O. Pellegrino et al., CHARACTERIZATION OF OLIGOTHIOPHENE FILMS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Thin solid films, 329, 1998, pp. 252-255
Electronic structures of quinquethiophene (5T) and sexithiophene (6T)
polycrystalline films deposited by evaporation on Sold substrates were
studied by high resolution electron energy loss spectroscopy (HREELS)
. Vibrational spectra were compared to infrared spectroscopy and Raman
scattering results. They reveal that surfaces are not rough and are f
ree from contaminants. Energy gap values of 2.38 +/- 0.02 and 2.27 +/-
0.02 eV for 5T and 6T films, respectively, were evaluated from electr
onic spectra. Comparison with optical spectroscopy enabled the assignm
ent of losses corresponding to optically allowed and forbidden transit
ions. Some of the latter ones located at 1.2, 1.7 and 2.0 eV were obse
rved in 5T films and were assigned to S-o-->T-n transitions. Different
ial cross section analysis reveals the presence of resonance processes
in the excitation mechanism. Ionization potentials were estimated to
he 4.7 +/- 0.5 eV for both films. (C) 1998 Elsevier Science S.A. All r
ights reserved.