NEGATIVE-RESISTANCE DEVICE USING ORGANIC-DYE-DOPED POLYMER FILM

In order to develop a new negative-resistance device, a single-layer d evice of organic-dye-doped insulating polymer was fabricated by dippin g. The current-voltage characteristics at room temperature showed rema rkable negative resistance. The ratio of peak current to valley curren t was 23 or higher and the difference between peak and valley voltages was 2 V. The negative resistance did not depend much on the combinati on of insulating polymer matrix and dye dopant or on temperature. This suggests that the negative resistance is caused by tunneling transpor t of holes or electrons. Two possible models are considered for the or igin of the negative resistance. One is based on the polarization form ed by holes or electrons trapped in the dye molecule. The other is bas ed on the tunneling at the interface between electrode and dye molecul es. (C) 1998 Elsevier Science S.A. All rights reserved.