LANGMUIR-BLODGETT-FILMS IN THE DEVELOPMENT OF HIGH-TEMPERATURE SINGLE-ELECTRON TUNNELING DEVICES

Citation
Gb. Khomutov et al., LANGMUIR-BLODGETT-FILMS IN THE DEVELOPMENT OF HIGH-TEMPERATURE SINGLE-ELECTRON TUNNELING DEVICES, Thin solid films, 329, 1998, pp. 550-553
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
329
Year of publication
1998
Pages
550 - 553
Database
ISI
SICI code
0040-6090(1998)329:<550:LITDOH>2.0.ZU;2-A
Abstract
Mixed Langmuir-Blodgett (LB) films consisting of inert molecular stear ic acid matrix and embedded cluster molecules (carborane and organo-me tallic molecules) were used to create reproducible, stable, ordered, p lanar nanostructures with different systems of electron tunnel junctio ns. All clusters were chemically synthesized and hence had atomically equal structure and reproducible properties. Mixed monolayers on the w ater surface were studied. Formed molecular structures were studied at room temperature using scanning tunneling microscopy and effects rela ted to single-electron tunneling and energy quantization of electrons were observed in such structures. (C) 1998 Elsevier Science S.A. All r ights reserved.