TEMPERATURE-DEPENDENCE OF CURRENT TRANSPORT IN PALLADIUM LB-FILM/SILICON DIODES/

Authors
OBEIRN B CASEY V GUBBINS MA MCMONAGLE JB
Citation
B. Obeirn et al., TEMPERATURE-DEPENDENCE OF CURRENT TRANSPORT IN PALLADIUM LB-FILM/SILICON DIODES/, Thin solid films, 329, 1998, pp. 652-654
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
329
Year of publication
1998
Pages
652 - 654
Database
ISI
SICI code
0040-6090(1998)329:<652:TOCTIP>2.0.ZU;2-6
Abstract
The results of a study of the temperature dependence of current transp ort in Pd/LB-film/n-Si diodes are presented. The current-voltage (I-V) characteristics are found to display strong temperature dependence fo r reverse and low forward bias. Such behaviour is not expected for a m ajority carrier Schottky diode. It is suggested that these structures are minority carrier tunnel diodes in which semiconductor related curr ent transport plays an important role in determining the device I-V ch aracteristics. At, high forward bias the current is tunnel limited. (C ) 1998 Published by Elsevier Science S.A. All rights reserved.