We report on the first implementation of a terahertz detector utilizin
g two-dimensional (2-D) electronic fluid in a high electron mobility t
ransistor (HEMT) operating at 2.5 THz. The terahertz radiation induced
a de drain-to-source voltage proportional to the radiation intensity.
The measured dependencies of the detector responsivity on the gate bi
as are in good agreement with the gate bias dependence of the normaliz
ed responsivity predicted by the detector theory. This result shows th
e potential for developing a new family of electronics devices-plasma
wave electronics devices-operating at terahertz frequencies.