Single-crystal SiC etching in an inductively coupled plasma (ICP) cham
ber using a gas mixture of O-2/CF4 has been investigated for the first
time. The dependence of etch rate on ICP power, substrate dc bias, an
d oxygen percentage was studied. It is found that etch rate increases
with ICP power and substrate de bias, and an etch rate exceeding 200 n
m/min can be obtained at -100 V substrate de bias. The etch rate is as
high as 20 nm/min, even when there is no substrate bias. Clean and sm
ooth surfaces can be obtained readily. Trenches with different depths
were etched and their profiles were examined by scanning electron micr
oscopy.