ETCHING OF SIC USING INDUCTIVELY-COUPLED PLASMA

Authors
Citation
Lh. Cao et al., ETCHING OF SIC USING INDUCTIVELY-COUPLED PLASMA, Journal of the Electrochemical Society, 145(10), 1998, pp. 3609-3612
Citations number
17
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
ISSN journal
00134651
Volume
145
Issue
10
Year of publication
1998
Pages
3609 - 3612
Database
ISI
SICI code
0013-4651(1998)145:10<3609:EOSUIP>2.0.ZU;2-C
Abstract
Single-crystal SiC etching in an inductively coupled plasma (ICP) cham ber using a gas mixture of O-2/CF4 has been investigated for the first time. The dependence of etch rate on ICP power, substrate dc bias, an d oxygen percentage was studied. It is found that etch rate increases with ICP power and substrate de bias, and an etch rate exceeding 200 n m/min can be obtained at -100 V substrate de bias. The etch rate is as high as 20 nm/min, even when there is no substrate bias. Clean and sm ooth surfaces can be obtained readily. Trenches with different depths were etched and their profiles were examined by scanning electron micr oscopy.