EXPERIMENTAL METHODS FOR INVESTIGATING THE DEFECT PROPERTIES OF SIO2 IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

In this paper different methods for characterizing the defect properti es of silicon dioxide and its interface to silicon in metal oxide semi conductor devices, and the resulting achievements in the field of reli ability assurance are reviewed. Methods are discussed which allow sens itive characterization of defects both at the interface and in the oxi de. Different electrical characterization and injection methods, the c harge pumping and gated diode methods are presented. Those methods hav e led to a well-accepted classification of the defects into interface traps of acceptor- and donor-type and fixed charges in the oxide. Subs equently, the microscopic spin-dependent recombination method is discu ssed which alone is able to give information on the atomic and molecul ar level of understanding. Finally, reliability assurance methods are presented, connecting hot-carrier degradation data of electrical param eters with the operation in digital and analog circuits. This leads to the definition of lifetime criteria useful in practice.