THE INTERACTION OF ATOMS WITH SEMICONDUCTOR SURFACES - THE CASE OF SBON GAAS (110)

Authors
FLORES F SAIZPARDO R RINCON R ORTEGA J PEREZ R GARCIAVIDAL FJ
Citation
F. Flores et al., THE INTERACTION OF ATOMS WITH SEMICONDUCTOR SURFACES - THE CASE OF SBON GAAS (110), Journal of physics. Condensed matter, 5, 1993, pp. 41-50
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
41 - 50
Database
ISI
SICI code
0953-8984(1993)5:<41:TIOAWS>2.0.ZU;2-3
Abstract
A free-parameter LCAO method for chemisorption problems is presented. The method includes many-body effects by means of a local-density pote ntial. The case of Sb on GaAs (110) has been analysed and the results am discussed in the perspective of Schottky barrier formation.