STUDY OF THE TEMPERATURE-PROGRAMMED DESORPTION OF IN ON SI(100) SURFACES

Authors
UNAC RO SALES JL ZGRABLICH G
Citation
Ro. Unac et al., STUDY OF THE TEMPERATURE-PROGRAMMED DESORPTION OF IN ON SI(100) SURFACES, Journal of physics. Condensed matter, 5, 1993, pp. 143-144
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
143 - 144
Database
ISI
SICI code
0953-8984(1993)5:<143:SOTTDO>2.0.ZU;2-R
Abstract
Indium growth on Si(100) is investigated through Monte Carlo simulatio n. The study supports the model proposed by Knall et al (1989).