THE OXIDATION OF GAAS(100) STUDIED BY AUGER-ELECTRON SPECTROSCOPY ANDPRINCIPAL COMPONENT ANALYSIS

Authors
PASSEGGI MCG VAQUILA I FERRON J
Citation
Mcg. Passeggi et al., THE OXIDATION OF GAAS(100) STUDIED BY AUGER-ELECTRON SPECTROSCOPY ANDPRINCIPAL COMPONENT ANALYSIS, Journal of physics. Condensed matter, 5, 1993, pp. 155-156
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
155 - 156
Database
ISI
SICI code
0953-8984(1993)5:<155:TOOGSB>2.0.ZU;2-F
Abstract
The oxidation in GaAs(100) has been studied by using AES and PCA. We f ound that at low oxygen exposures (below 10(4) L), GaAs oxidizes throu gh a one phase process which involves the simultaneous oxidation of Ga and As.