APPLICATIONS OF ION MICROSCOPY AND IN-SITU ELECTRON-MICROSCOPY TO THESTUDY OF ELECTRONIC MATERIALS AND DEVICES

Citation
R. Hull et al., APPLICATIONS OF ION MICROSCOPY AND IN-SITU ELECTRON-MICROSCOPY TO THESTUDY OF ELECTRONIC MATERIALS AND DEVICES, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 308-316
Citations number
22
Categorie Soggetti
Microscopy
ISSN journal
14319276
Volume
4
Issue
3
Year of publication
1998
Pages
308 - 316
Database
ISI
SICI code
1431-9276(1998)4:3<308:AOIMAI>2.0.ZU;2-B
Abstract
We discuss the application of ion microscopy and in situ electron micr oscopy to the study of electronic and optical materials and devices. W e demonstrate how the combination of in situ transmission electron mic roscopy and focused ion beam microscopy provides new avenues for the s tudy for such structures, enabling extension of these techniques to th e study of dopant distributions, nanoscale stresses, three-dimensional structural and chemical reconstruction and real-time evolution of def ect microstructure. We also discuss in situ applications of thermal, m echanical, electrical, and optical stresses during transmission electr on microscopy imaging.