IN-SITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE MAGNETIZATIONREVERSAL MECHANISM IN INFORMATION-STORAGE MATERIALS

Citation
Ak. Petfordlong et al., IN-SITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE MAGNETIZATIONREVERSAL MECHANISM IN INFORMATION-STORAGE MATERIALS, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 325-333
Citations number
15
Categorie Soggetti
Microscopy
ISSN journal
14319276
Volume
4
Issue
3
Year of publication
1998
Pages
325 - 333
Database
ISI
SICI code
1431-9276(1998)4:3<325:ITESOT>2.0.ZU;2-Z
Abstract
The Foucault and Fresnel modes of Lorentz microscopy, together with a quantitative magnetization mapping technique, summed image differentia l phase-contrast imaging, were used to study the magnetization reversa l mechanism of the sense layer in spin-valve structures exhibiting the giant magnetoresistance effect. In addition to studies of sheet film, lithographically defined spin-valve elements were investigated. A cur rent can be passed through the element during magnetizing so that the effect of the applied current on the giant magnetoresistance and magne tization reversal mechanism can be studied. Results are presented for a number of different spin-valve structures.