NUCLEATION AND GROWTH OF DIAMOND FILMS ON MU-C-SIC X-SI BY HOT-FILAMENT CVD

Citation
Ga. Hirata et al., NUCLEATION AND GROWTH OF DIAMOND FILMS ON MU-C-SIC X-SI BY HOT-FILAMENT CVD, Journal of physics. Condensed matter, 5, 1993, pp. 305-306
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
305 - 306
Database
ISI
SICI code
0953-8984(1993)5:<305:NAGODF>2.0.ZU;2-Q
Abstract
Using hot-filament CVD (HF-CVD) We succeeded in preparing polycrystall ine diamond films on non-scratched crystalline silicon by depositing a very thin microcrystalline silicon carbide buffer layer. Films were c haracterized by AES, EELS and SEM.