PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIESOF STATES

Authors
DEMAGALHAES CS ALVAREZ F SEBASTIANI M FIORINI P POZZILLI F EVANGELISTI F
Citation
Cs. Demagalhaes et al., PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIESOF STATES, Journal of physics. Condensed matter, 5, 1993, pp. 329-330
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
329 - 330
Database
ISI
SICI code
0953-8984(1993)5:<329:POACAW>2.0.ZU;2-3
Abstract
The low temperature photoluminescence emission of amorphous silicon-ca rbon alloys is presented. A linear correlation between the photolumine scence width and the absorption band tails was found, suggesting that disorder is the main source of the radiative broadening.