Cs. Demagalhaes et al., PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIESOF STATES, Journal of physics. Condensed matter, 5, 1993, pp. 329-330
The low temperature photoluminescence emission of amorphous silicon-ca
rbon alloys is presented. A linear correlation between the photolumine
scence width and the absorption band tails was found, suggesting that
disorder is the main source of the radiative broadening.