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ITA
ENG
SELF-CONSISTENT ELECTRONIC STATES IN SQUARE-DOPED GAAS
Authors
CLARO F
ORELLANA P
Citation
F. Claro et P. Orellana, SELF-CONSISTENT ELECTRONIC STATES IN SQUARE-DOPED GAAS, Journal of physics. Condensed matter, 5, 1993, pp. 359-360
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter
→
ACNP
ISSN journal
09538984
Volume
5
Year of publication
1993
Supplement
33A
Pages
359 - 360
Database
ISI
SICI code
0953-8984(1993)5:<359:SESISG>2.0.ZU;2-F
Abstract
We discuss the self-consistent bound states of a strip of donor impuri ties in GaAs in the Hartree approximation. For electrons to be bound t o the strip at least four energy levels must be occupied regardless of the strip width.