POLARIZATION-DEPENDENT ANGLE-RESOLVED PHOTOEMISSION-STUDY OF A SURFACE-STATE ON GASB(110)

Citation
Xd. Zhang et al., POLARIZATION-DEPENDENT ANGLE-RESOLVED PHOTOEMISSION-STUDY OF A SURFACE-STATE ON GASB(110), Physical review. B, Condensed matter, 48(8), 1993, pp. 5300-5305
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
8
Year of publication
1993
Pages
5300 - 5305
Database
ISI
SICI code
0163-1829(1993)48:8<5300:PAPOAS>2.0.ZU;2-#
Abstract
Using polarization-dependent, angle-resolved photoemission, a prominen t nondispersive structure in the normal emission spectra from GaSb(110 ) has been identified as being due to transitions from the Sb-derived dangling-bond surface state. The atomic-orbital character of the surfa ce state was confirmed to be mainly p(z)-like, and the dispersion of t he surface state along the GAMMABAR XBAR direction in the surface Bril louin zone was observed. Using symmetry selection rules, an accurate d etermination of GAMMA8v, the valence-band maximum (VBM), was made. The surface state was found to be 150+/-100 meV above the VBM, showing th at the surface state is indeed an intrinsic intergap surface state.