CHARACTERIZING HOT-CARRIER TRANSPORT IN SILICON HETEROSTRUCTURES WITHTHE USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY

Authors
BELL LD MANION SJ HECHT MH KAISER WJ FATHAUER RW MILLIKEN AM
Citation
Ld. Bell et al., CHARACTERIZING HOT-CARRIER TRANSPORT IN SILICON HETEROSTRUCTURES WITHTHE USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review. B, Condensed matter, 48(8), 1993, pp. 5712-5715
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
8
Year of publication
1993
Pages
5712 - 5715
Database
ISI
SICI code
0163-1829(1993)48:8<5712:CHTISH>2.0.ZU;2-B
Abstract
High-energy (0.1-1 eV) measurements of ballistic carrier transport in semiconductors have been performed using a new ballistic-electron-emis sion microscopy (BEEM) technique. Hot-electron attenuation lengths for p-type Si have been determined by combining precise Si molecular-beam -epitaxy methods with BEEM. A striking anomaly has been observed in th e comparison of the 293- and 77-K results.