Gcl. Wong et al., CAF2-SI(111) AS A MODEL IONIC-COVALENT SYSTEM - TRANSITION FROM CHEMISORPTION TO EPITAXY, Physical review. B, Condensed matter, 48(8), 1993, pp. 5716-5719
The demands of chemisorption and epitaxy are quite different for elect
ronically dissimilar systems. The transition between these two regimes
in CaF2-Si(111) is studied with transmission-electron microscopy and
photoemission. Changes in the electronic structure of the evolving gro
wth surface are expressed in the composite growth mode, a Stranski-Kra
stanow pathway to layer-by-layer growth, which begins with CaF2 cohere
nt island formation on a Si-CaF layer. After this transition, layer-by
-layer CaF2 homoepitaxy is possible even at room temperature, and the
critical thickness can be extended.