Jy. Zheng et al., A PHOTORESPONSIVE SILICON RADICAL WITHIN A PORPHYRIN PI-CLOUD - PHOTOLYSIS OF ORGANO-SILICON AND NITROXYSILICON PORPHYRINS WITH VISIBLE-LIGHT, Journal of the American Chemical Society, 120(38), 1998, pp. 9838-9843
Upon irradiation with visible light (lambda > 420 nm) in C6D6 under Ar
, dialkylsilicon porphyrins Si(TPP)R-2 (TPP = 5,10,15,20-tetraphenylpo
rphinato) (R =CH2CH2CH3 (1) and CH2TMS (2)) reacted with nitroxy compo
unds, such as 2,2,6,6-tetramethylpiperidinyl-1-oxy (TEMPO), 4-oxo-,2,6
,6-tetramethylpiperidinyl-1-oxy, and 1,1,3,3-tetramethylisoindolinyl-2
-oxy, to give dinitroxysilicon porphyrins 6. In the absence of nitroxy
compounds, photolysis of I resulted in the formation of a long-lived
(>50 days at 25 degrees C) EPR-active silicon diradical with a g-value
of 2.0026, which did not react with nitroxy compounds in the dark but
was smoothly trapped by TEMPO to give 6a upon excitation with visible
light. Irradiation of 6 with visible Light in the presence of free ni
troxy compounds resulted in reversible axial ligand exchange, which pr
oceeded, in response to the switching on and off of the light, to reac
h an equilibrium.