A PHOTORESPONSIVE SILICON RADICAL WITHIN A PORPHYRIN PI-CLOUD - PHOTOLYSIS OF ORGANO-SILICON AND NITROXYSILICON PORPHYRINS WITH VISIBLE-LIGHT

Citation
Jy. Zheng et al., A PHOTORESPONSIVE SILICON RADICAL WITHIN A PORPHYRIN PI-CLOUD - PHOTOLYSIS OF ORGANO-SILICON AND NITROXYSILICON PORPHYRINS WITH VISIBLE-LIGHT, Journal of the American Chemical Society, 120(38), 1998, pp. 9838-9843
Citations number
29
Categorie Soggetti
Chemistry
ISSN journal
00027863
Volume
120
Issue
38
Year of publication
1998
Pages
9838 - 9843
Database
ISI
SICI code
0002-7863(1998)120:38<9838:APSRWA>2.0.ZU;2-Z
Abstract
Upon irradiation with visible light (lambda > 420 nm) in C6D6 under Ar , dialkylsilicon porphyrins Si(TPP)R-2 (TPP = 5,10,15,20-tetraphenylpo rphinato) (R =CH2CH2CH3 (1) and CH2TMS (2)) reacted with nitroxy compo unds, such as 2,2,6,6-tetramethylpiperidinyl-1-oxy (TEMPO), 4-oxo-,2,6 ,6-tetramethylpiperidinyl-1-oxy, and 1,1,3,3-tetramethylisoindolinyl-2 -oxy, to give dinitroxysilicon porphyrins 6. In the absence of nitroxy compounds, photolysis of I resulted in the formation of a long-lived (>50 days at 25 degrees C) EPR-active silicon diradical with a g-value of 2.0026, which did not react with nitroxy compounds in the dark but was smoothly trapped by TEMPO to give 6a upon excitation with visible light. Irradiation of 6 with visible Light in the presence of free ni troxy compounds resulted in reversible axial ligand exchange, which pr oceeded, in response to the switching on and off of the light, to reac h an equilibrium.