IMPROVED HEMT MODEL FOR LOW PHASE-NOISE INP-BASED MMIC OSCILLATORS

Authors
SCHREURS D VANMEER H VANDERZANDEN K DERAEDT W NAUWELAERS B VANDECAPELLE A
Citation
D. Schreurs et al., IMPROVED HEMT MODEL FOR LOW PHASE-NOISE INP-BASED MMIC OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1583-1585
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
46
Issue
10
Year of publication
1998
Part
2
Pages
1583 - 1585
Database
ISI
SICI code
0018-9480(1998)46:10<1583:IHMFLP>2.0.ZU;2-6
Abstract
This paper focuses on two modeling aspects to improve the accuracy of low phase-noise monolithic-microwave integrated-circuit (MMIC) oscilla tor design. Up until now, the modeling of InP-based high electron mobi lity transistors (HEMT's) has mainly been limited to the representatio n of small-signal and thermal noise behavior. In this paper, we presen t a scaleable nonlinear and bias-dependent low-frequency (LF) noise mo del.