94-GHZ PULSED SILICON IMPATT OSCILLATOR MODELING

A new type of 94-GKz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine mode l, time-domain isothermal model, and time-domain electro-thermal model , which basically rely on a diode one-dimensional bipolar drift-diffus ion model embedded in a time-domain circuit modeling, In this paper, t hey are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimize d. In each case, the thermal behavior is especially considered. Thirdl y, pulse-operation-simulation results are compared with experiments pe rformed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France, F inally, some improvements of the present modeling are discussed in Sec tion VI.