BROAD-BAND (GREATER-THAN-OR-EQUAL-TO-20 GHZ) LASER-DIODE-BASED OPTOELECTRONIC MICROWAVE PHASE-SHIFTER

Citation
Gr. Lin et al., BROAD-BAND (GREATER-THAN-OR-EQUAL-TO-20 GHZ) LASER-DIODE-BASED OPTOELECTRONIC MICROWAVE PHASE-SHIFTER, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1419-1426
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
46
Issue
10
Year of publication
1998
Part
1
Pages
1419 - 1426
Database
ISI
SICI code
0018-9480(1998)46:10<1419:B(GLO>2.0.ZU;2-X
Abstract
We demonstrate a new type of broad-band microwave phase shifter with s uperior performance at frequencies up to 20 GHz. This is implemented b y simply adding an offset voltage prior to the loop filter (LF) in a l aser-diode-based digital optoelectronic phase-locked loop (OEPLL), Acc urate control of the phase of microwave signals with a continuously tu nable range exceeding 640 degrees (similar to 3.6 pi) is achieved. The phase fluctuation and long-term drift of ally desired phase shift are as small as +/-0.4 degrees and 0.08 degrees, respectively, at 20 GHz, The relative phase instability can be maintained within 0.09 degrees while operating in a phase-shift-keying (PSK) scheme, We also demonstr ate accurate control of relative phase difference between dual phase-l ocked microwave sources using the phase shifter. Our results indicate potential application of this broad-band optoelectronic phase shifter in a phased-array antenna system.