MECHANISMS AND KINETICS OF THE INITIAL-STAGES OF GROWTH OF FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION

Citation
Da. Grigorev et Sa. Kukushkin, MECHANISMS AND KINETICS OF THE INITIAL-STAGES OF GROWTH OF FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Technical physics, 43(7), 1998, pp. 846-852
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637842
Volume
43
Issue
7
Year of publication
1998
Pages
846 - 852
Database
ISI
SICI code
1063-7842(1998)43:7<846:MAKOTI>2.0.ZU;2-3
Abstract
The initial stages of growth of films and coatings by chemical vapor d eposition are investigated. A system of equations is derived which des cribes the evolution of an island him at the stage of Ostwald ripening under conditions characteristic of vapor deposition. Solving this sys tem of equations yields the dependence of all of the main characterist ics of island films (the size distribution function of the islands, th e dependence of the mean radius and density of the islands) as functio ns of rime and the spatial coordinate, Suggestions are given for the p reparation of films with prescribed properties. (C) 1998 American Inst itute of Physics. [S1063-7842(98)01807-8].