INFLUENCE OF SUCCESSIVE ELECTRON AND LASER IRRADIATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON

The influence of electron irradiation on the light-emitting properties of p- and n-type porous silicon prepared by electrochemical etching i s investigated. The dose and energy dependences of the electron-stimul ated quenching of the photoluminescence (PL) are determined. It is sho wn that electron treatment of a porous silicon surface followed by pro longed storage in air can be used to stabilize the FL. The excitation of photoluminescence by a UV laser acting on sections of porous silico n samples subjected to preliminary electron treatment is discovered fo r the first time. The influence of the electron energy and the power o f the laser beam on this process is investigated. The results presente d are attributed to variation in the number of radiative recombination centers as a result of the dissociation and restoration of hydrogen-c ontaining groups on the pore surface. (C) 1998 American Institute of P hysics. [S1063-7842(98)00903-9].