ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE

Citation
As. Abramov et al., ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE, Technical physics, 43(2), 1998, pp. 180-187
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637842
Volume
43
Issue
2
Year of publication
1998
Pages
180 - 187
Database
ISI
SICI code
1063-7842(1998)43:2<180:IOAFDP>2.0.ZU;2-3
Abstract
The characteristics of ion and electron fluxes to the surface of a gro wing silicon film are investigated in various rf discharge regimes in silane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemi cal vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electroni c properties of films grown under various degrees of ion bombardment a re studied. The correlation of these properties with the ion parameter s in the rf discharge plasma during film growth is discussed. (C) 1998 American Institute of Physics. [S1063-7842(98)01002-2].