ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE

The characteristics of ion and electron fluxes to the surface of a gro wing silicon film are investigated in various rf discharge regimes in silane at frequencies of 13.56 MHz and 58 MHz in plasma-enhanced chemi cal vapor-deposition (PECVD) apparatus. The energy spectra of the ions and electrons bombarding the growing film are measured. The electroni c properties of films grown under various degrees of ion bombardment a re studied. The correlation of these properties with the ion parameter s in the rf discharge plasma during film growth is discussed. (C) 1998 American Institute of Physics. [S1063-7842(98)01002-2].