This article illustrates a number of types of degradation and material
damage found in the microstructures of the component parts of power t
ransistors. The various types of damage are clarified with reference t
o the results of metallographical investigations which clearly trace t
he microstructural changes and damage sustained back to causes such as
current or voltage overload, or temperature cycling in service,The th
ermomechanical fatigue processes presented show that semiconductor com
ponents are subject to damage by long term material degradation.