EVOLUTION OF GRAIN-BOUNDARY FILMS IN LIQUID-PHASE SINTERED SILICON-NITRIDE DURING HIGH-TEMPERATURE TESTING

Citation
S. Stemmer et al., EVOLUTION OF GRAIN-BOUNDARY FILMS IN LIQUID-PHASE SINTERED SILICON-NITRIDE DURING HIGH-TEMPERATURE TESTING, Acta materialia, 46(15), 1998, pp. 5599-5606
Citations number
34
Categorie Soggetti
Material Science","Metallurgy & Metallurigical Engineering
Journal title
ISSN journal
13596454
Volume
46
Issue
15
Year of publication
1998
Pages
5599 - 5606
Database
ISI
SICI code
1359-6454(1998)46:15<5599:EOGFIL>2.0.ZU;2-8
Abstract
Transmission electron microscopy (TEM) is used to study the effect of high-temperature tests on the amorphous grain boundary films in a comm ercial, liquid phase sintered silicon nitride ceramic. The thickness o f amorphous films between silicon nitride grains is characterized by h igh-resolution TEM. In addition, electron energy-loss spectroscopy is applied to analyze the composition of grain boundary films. A smaller equilibrium film thickness is measured in the specimens after testing. This decrease in film thickness is due to changes in the intergranula r film chemistry. The composition changes are caused by phase transfor mations in the secondary crystalline phases, which were observed by TE M and X-ray diffraction, and by crystallization of residual amorphous pockets during high-temperature testing. (C) 1998 Acta Metallurgica In c. Published by Elsevier Science Ltd. All rights reserved.