LOW-TEMPERATURE PHOTOLUMINESCENCE OF HEAVY-ION-IMPLANTED INGAP SOLID-SOLUTIONS

Authors
BHATTACHARYYA D VINOKUROV DA GUSINSKII GM ELYUKHIN VA KOVALENKOV OV KYUTT RN MARSH JH NAIDENOV VO PORTNOI EL
Citation
D. Bhattacharyya et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF HEAVY-ION-IMPLANTED INGAP SOLID-SOLUTIONS, Technical physics letters, 24(9), 1998, pp. 690-691
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
9
Year of publication
1998
Pages
690 - 691
Database
ISI
SICI code
1063-7850(1998)24:9<690:LPOHIS>2.0.ZU;2-Q
Abstract
The photoluminescence spectra of samples of the solid solution In(0.5) Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 10(11)-5 x 10(12) cm(-2) shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formati on of essentially one-dimensional semiconductor structures along the i ndividual ion tracks. (C) 1998 American Institute of Physics.