FEATURES OF THE MICROWAVE BREAKDOWN OF A HIGH-T-C SUPERCONDUCTING FILM AT DEFECTS

Citation
Na. Buznikov et Aa. Pukhov, FEATURES OF THE MICROWAVE BREAKDOWN OF A HIGH-T-C SUPERCONDUCTING FILM AT DEFECTS, Technical physics letters, 24(9), 1998, pp. 697-699
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637850
Volume
24
Issue
9
Year of publication
1998
Pages
697 - 699
Database
ISI
SICI code
1063-7850(1998)24:9<697:FOTMBO>2.0.ZU;2-R
Abstract
The influence of nonsuperconducting defects on the power density for m icrowave breakdown of a high-T-c superconducting film is investigated theoretically. It is found that the scenario of the destruction of sup erconductivity depends substantially on the shape of the defect and on the ratio of the absorption coefficients of the defect and film. It i s shown that the breakdown power density at a defect may be higher tha n or equal to the threshold power density for microwave breakdown of a homogeneous film. (C) 1998 American Institute of Physics.