SUB-LINEAR DEPENDENCIES OF THE SURFACE CONDUCTIVITY ON THE GAS-PRESSURE

We investigated physical processes in semiconductor gas sensors and, i n particular, dependencies of the surface potential and concentration of charge carriers in the space charge region of a semiconductor on th e gas pressure. Corresponding sub-linear dependencies of the concentra tion of charge carriers on the gas pressure of an adsorbed gas are obt ained both for the case describing by usual Langmuirian kinetic equati on and in the case when the gas adsorption leads to a reduction in the heat of the adsorption due to a charging of the semiconductor surface . (C) 1998 Elsevier Science B.V. All rights reserved.