Sp. Tang et al., EVALUATING THE MINIMUM THICKNESS OF GATE OXIDE ON SILICON USING FIRST-PRINCIPLES METHOD, Applied surface science, 135(1-4), 1998, pp. 137-142
Citations number
32
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The continuing reduction in integrated circuit element size results in
contemplating physical structures with dimensions in which an atomist
ic picture becomes important. So far, an essential element responsible
for the ever-shrinking device is the feasibility of reducing the SiO2
gate insulator thickness from one technology generation to another. U
sing a first-principles pseudopotential approach, we made such an atte
mpt to evaluate the minimum thickness of SiO2 on Si substrate at which
a proper barrier height between SiO2 and Si holds. This was done by s
tudying the band offset between SiO2 and Si as a function of SiO2 thic
kness. The SiO2/Si(100) interface structure is constructed between bet
a-cristobalite SiO2 layer and Si(001), Three superlattices containing
two, four and eight layers of SiO2 are considered. Based on the fact t
hat the band offsets reach a saturation value after approximately 7 An
gstrom of SiO2 thickness, we estimate that the minimum gate oxide thic
kness is 7 Angstrom. (C) 1998 Elsevier Science B.V. All rights reserve
d.