COMPARISON OF THE INTERDIFFUSION LENGTHS IN GAAS AL0.35GA0.65AS MULTIPLE-QUANTUM WELLS DETERMINED FROM PHOTOLUMINESCENCE AND DOUBLE-CRYSTALX-RAY ROCKING CURVE MEASUREMENTS/

Photoluminescence (PL) and double crystal X-ray rocking curve (DCRC) m easurements were performed in order to determine the interdiffusion le ngth in GaAs/AlGaAs multiple quantum wells (MQWs) grown by molecular b eam epitaxy (MBE) heated by rapid thermal annealing. The PL spectra sh ow that the ground state energy level in the GaAs quantum well increas es after thermal annealing, and the interdiffusion length is calculate d using this result. After the potential profile as a function of the diffusion length was determined, an Al mole fraction, an structure fac tor and an satellite peak of the m = + 1 in the well and barrier sides were determined. The diffusion length in the quantum well interface w as also determined from the experimental and theoretical values from t he satellite peak intensities of the m = +/- 1. The agreement of the i nterdiffusion length value between PL and DCRC results is reasonable. (C) 1998 Elsevier Science B.V. All rights reserved.