I-V AND C-V PROPERTIES OF TIO2 THIN-FILM BY PULSED-LASER REACTIVE DEPOSITION

Authors
FU ZW ZHOU MF ZHANG SK CHEN LY QIN QZ
Citation
Zw. Fu et al., I-V AND C-V PROPERTIES OF TIO2 THIN-FILM BY PULSED-LASER REACTIVE DEPOSITION, Chinese Science Bulletin, 43(16), 1998, pp. 1344-1349
Citations number
11
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Chinese Science Bulletin → ACNP
ISSN journal
10016538
Volume
43
Issue
16
Year of publication
1998
Pages
1344 - 1349
Database
ISI
SICI code
1001-6538(1998)43:16<1344:IACPOT>2.0.ZU;2-Q
Abstract
TiO2 thin films have bee deposited on p-Si(lll) substrates by pulsed-l aser ablation of metallic Ti target in the O-3 ambient. The current-vo ltage and capacitance-voltage of the Al/TiO2/Si capacitors are measure d. The results show that the dielectric constant of thin film after be ing annealed at 700 degrees C is found to be 46, and the border trap d ensity and the interface state density at the TiO2/p-Si interface are 1.8 x 10(12) cm(-2) and 2 x 10(12) eV(-1) cm(-2), respectively. The co nduction mechanisms of as deposited films are also discussed.