Energy transfer between rare-earth (RE) ions and excitons in semicondu
ctors has already been known for some time. In this paper we would lik
e to direct your attention to the interaction between excitons and RE
ions in ionic crystals as used, e.g. for laser applications. A suitabl
e model substance to study these effects is RE-doped CsCdBr3. The reas
ons are: (i) the low phonon frequencies due to the heavy ion masses ((
h) over bar omega(max) < 200 cm(-1)); (ii) metastable excitonic states
in the visible spectral range; (iii) strong exciton-ion interaction d
ue to covalent overlap of the wavefunctions. Due to the low phonon fre
quencies, multiphonon processes of the RE ions are reduced drastically
and ion-exciton processes can be studied in more detail. The followin
g processes were found: (i) exciton-mediated nonradiative relaxations.
These processes can bridge much larger energy gaps than direct multip
honon relaxation and are more efficient. The reason is that the nonrad
iative multiphonon relaxation of the RE ion is dominated by a fast mul
tistep one-phonon relaxation of the exciton by energy transfer; (ii) e
xciton-mediated quantum upconversion. This effect is based on a cooper
ative energy transfer from two excited RE ions to an exciton and a sub
sequent back transfer to a single ion. This process is much faster tha
n upconversion by phonon-assisted cross relaxation between two excited
RE ions; (iii) exciton-induced changes in the crystal-held splitting
of RE ions. Energy levels of RE ions in resonance with the excitons sh
ow crystal-held splittings which cannot be described by the parameters
suitable for the other levels. We propose an increased covalent overl
ap between the wavefunction of the RE ion and of the exciton-forming l
igands due to hybridization as an explanation for this effect. (C) 199
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