DYNAMIC POTENTIAL FORMATION OF A RF-SHEATH NEAR THE SUBSTRATE IN A DCDISCHARGE PLASMA

Authors
Citation
Z. Hasan et H. Fujita, DYNAMIC POTENTIAL FORMATION OF A RF-SHEATH NEAR THE SUBSTRATE IN A DCDISCHARGE PLASMA, Journal of physics. D, Applied physics (Print), 31(18), 1998, pp. 2281-2285
Citations number
16
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
31
Issue
18
Year of publication
1998
Pages
2281 - 2285
Database
ISI
SICI code
0022-3727(1998)31:18<2281:DPFOAR>2.0.ZU;2-1
Abstract
The dynamic potential formation of a radio-frequency (rf) sheath near the substrate was experimentally studied over a wide range of the freq uency under a fixed plasma density produced by an Ar de discharge plas ma. Potential structures of the rf sheath obtained by detecting spatia l profiles of the crest and trough potentials in the rf oscillation pr ovided a strong frequency dependence. The sheath thickness of the trou gh potential expanded in the high-frequency region unlike the rf elect rode in the conventional capacitively coupled rf discharge plasma. The potential well with a depth of an electron temperature formed in fron t of the substrate on the crest profile in the low-frequency region. S imilar experiments in a CF4 de discharge plasma producing negative ion s were also performed. The virtual anode formed in the crest profile a nd its potential height grew with increasing applied frequency.