Films consisting of CNx, TixAlyN, and crystalline-TiN/amorphous-Si3N4
were grown using IBAD with Ar or N. The substrate material was polishe
d (100) Si. The Films were analysed using RES, HRTEM, SNMS, and nanoin
dentation techniques. In the first study a nitrogen content as high as
55% in CNx films was achieved by using a novel encapsulation techniqu
e. In a second study it has been shown that the hardness of TixAlyN in
creases from 1600 kgfmm(-2) to 3460 kgfmm(-2) when using IBAD. Further
more, thr maximum hardness is achieved by a composition approaching Ti
0.5Al0.5N. Finally, a preliminary study involving the growth of nanocr
ystals of TiN imbedded within an amorphous Si3N4 matrix shows that the
hardness approaches a maximum value of 2450 kgfmm(-2) when the silico
n content is about 8%. However, the hardness is not as great as previo
usly reported films grown by plasma enhanced CVD. The grain size of th
e TiN is approximately 10 nm which is greater than the predicted optim
um values of 3-5 nm.