SEMICONDUCTOR NANOPARTICLES FOR QUANTUM DEVICES

Citation
V. Erokhin et al., SEMICONDUCTOR NANOPARTICLES FOR QUANTUM DEVICES, Nanotechnology (Bristol. Print), 9(3), 1998, pp. 158-161
Citations number
25
Categorie Soggetti
Engineering,"Physics, Applied","Material Science
ISSN journal
09574484
Volume
9
Issue
3
Year of publication
1998
Pages
158 - 161
Database
ISI
SICI code
0957-4484(1998)9:3<158:SNFQD>2.0.ZU;2-N
Abstract
Semiconductor nanoparticles were synthesized by exposing fatty acid sa lt Langmuir-Blodgell films to the atmosphere of H2S. The particle size s were characterized by small-angle x-ray scattering of their solution s using synchrotron radiation source at higher resolution, as it was i mpossible previously to study it with usual laboratory x-ray sources. The particle sizes were found to correspond with the demands of single -electron and quantum junctions. Semiconductor heterostructures were g rown by self-aggregation of these particles of different types. Electr ical properties of these nanostructures were studied by using STM. Vol tage-current characteristics revealed the presence of differential neg ative resistance. Measurements confirmed the formation of semiconducto r superlattices directed towards a development of new nanodevices, suc h as tunnelling diodes and semiconductor lasers.