TRANSVERSE ELECTRIC-FIELD MEASUREMENTS ON OFF-AXIS N-SILICON SAMPLES

The anisotropic individual valley mobilities of the conduction band el ectrons in silicon lead to the formation of space charge regions at th e surfaces of a non-(100) layer-shaped sample when a longitudinal elec tric field is applied. The transverse electric field associated with t he redistributed mobile charge has been investigated for n-silicon sam ples having two off-axis crystallographic orientations. The magnitude of the measured mean transverse electric field was found to be in good agreement with theory, and useful information has been obtained from the measurements on tau(f), the characteristic time for intervalley el ectron f-scattering in silicon, in the temperature range 77-300 K.