COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS

A new compound semiconductor complementary transistor technology is pr oposed and the constituent devices demonstrated in discrete form. The n-channel transistor exhibits a peak transconductance of 110 mS/mm, a drain current density of 240 mA/mm and a unity current gain frequency of 9.5 GHz for a nominal gate length of 1 mum. The p-channel transisto r has a peak transconductance of 35 mS/mm and a drain current density of 65 mA/mm for an effective gate length of 1.1 mum. Compatibility of this technology with optical devices is shown by fabricating a laser f rom the same material. Threshold current densities as low as 950 A/cm2 and external efficiencies of 50% are obtained.