J. Rodrigueztellez et B. Stothard, AMBIENT-TEMPERATURE EFFECTS ON DC BEHAVIOR OF GAAS-MESFET DEVICES, IEE proceedings. Part G. Circuits, devices and systems, 140(4), 1993, pp. 305-311
DC measurements at different temperatures on a wide range of different
-sized MESFET devices show that temperature effects change the behavio
ur of the device. The results indicate that, as the drain current is r
educed, the behaviour of the device becomes more susceptible to temper
ature effects. In the main, this is due to the temperature dependency
of the pinchoff point. The data presented show that the dependency of
the pinchoff point on temperature does not follow a straight-line law,
but has three regions of operation, each with a different temperature
coefficient. The data also show that, as the temperature is reduced,
the dependency of the pinchoff point on the drain-source voltage incre
ases.