HIGH-PERFORMANCE LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY NEW METAL-INDUCED LATERAL CRYSTALLIZATION PROCESS

Effect of crystalline defects in metal-induced lateral crystallization (MILC) thin film transistors (TFTs) was studied and a new MILC method was proposed to improve the electrical properties of poly-Si TFTs. De fects at channel, which were formed by Ni in conventional MILC method, could be successfully removed by means of asymmetric Ni-deposition. S ince the crystalline defects were removed at the channel, held-effect electron mobility increased by a large value up to 120 cm(2)/Vs, while the leakage current was reduced. Electrical properties of the TFTs fa bricated by the new MILC method were dependent on which side of the ch annel was deposited with Ni.