CONDUCTION-BAND SPIN SPLITTING IN INXGA1-XAS GAAS QUANTUM-WELLS/

Optically detected spin resonance (ODSR) was used to obtain the effect ive g-values (g) in type-I InxGa1-xAs/GaAs quantum wells. The resonan ces were detected on the excitonic quantum well luminescence that has an optical recombination time as short as 260 ps. Hence the present OD SR study addresses a regime far beyond the usual for magnetic resonanc e experiments, where the times of spin transitions and of carrier reco mbination dynamics are on a microsecond scale. The resonances, exhibit ing an anisotropic g-tensor with the two components g(parallel to) an d g(perpendicular to), are assigned to electric dipole-induced electr on spin transitions. The g-values of the quantum wells differ from the bulk values, which is explained by strain and confinement.