PROPERTIES OF REGIOREGULAR POLY(3-ALKYLTHIOPHENE) SCHOTTKY DIODES

An investigation into the effect of carrier trapping in polymer Schott ky diodes is presented. The diodes have been fabricated using regioreg ular poly(3-octylthiophene) as the semiconductor and aluminium and ind ium doped tin-oxide as the rectifying and ohmic contacts respectively. The diodes show rectification ratios up to 3-4 orders of magnitude. E vidence for image force lowering of the Schottky barrier is observed. The frequency dependence of the capacitance, conductance and dielectri c loss is analysed, from which detailed information on the metal/semic onductor interface and the doping level is obtained. An equivalent cir cuit is proposed.