DYNAMICS OF CHARGE STORAGE AND INTERACTION OF MICROWAVES WITH SILICON-INTEGRATED SURFACE ORIENTED STRUCTURES

Authors
KOSHEVAYA S TECPOYOTL M HAYAKAWA M GRIMALSKY V KISHENKO Y
Citation
S. Koshevaya et al., DYNAMICS OF CHARGE STORAGE AND INTERACTION OF MICROWAVES WITH SILICON-INTEGRATED SURFACE ORIENTED STRUCTURES, JPN J A P 1, 37(8), 1998, pp. 4334-4335
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
8
Year of publication
1998
Pages
4334 - 4335
Database
ISI
SICI code
Abstract
This article focuses on the problem of injection of charges into the i -region of a surface-oriented p-i-n structure, This structure is very promising for detection and modulation of millimeter and submillimeter wave range. Both numerical and experimental investigations of the dyn amics of charge storage and interaction of microwaves with integrated surface oriented p-i-n structure with ''deep'' injecting junctions are presented.