FORMATION OF C-AXIS ORIENTED YBA2CU3O7-Y THIN-FILM ON AMORPHOUS SUBSTRATES WITH AL(111) BUFFER LAYER

C-axis-oriented YBa2Cu3O7, (YBCO) films have been formed on (111)-orie nted Al films using the pulsed-laser deposition method. The (111)-orie nted Al films, which are grown at room temperature, are effective for the formation of a crystallized YBCO film on an amorphous substrate. B efore YBCO film formation, the Al surface was oxidized in (O-2 + 8% O- 3) gas atmosphere to create an AlOx layer on the top surface of the Al film. This AlOx plays the role of a buffer and seed layer which has a periodic potential of atomic order corresponding to the Al(111) plane . The optimal substrate temperature for YBCO deposition was 590 degree s C. The T-c(onset) and T-c(zero) of the YBCO film formed on Al/glass were 90 K and 75 K, respectively.